PART |
Description |
Maker |
K6F2008T2E-YF55 K6F2008T2E-YF70 K6F2008T2E K6F2008 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K6F2008S2E-F K6F2008S2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
BS62UV2006 BS62UV2006TIP85 BS62UV2006DC BS62UV2006 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit 超低功率/电压CMOS SRAM56K × 8 1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
MX27C2048PC-55 MX27C2048PC-90 MX27C2048QC-55 MX27C |
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PDIP40 2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDIP40 2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PQCC44 2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 70 ns, PQCC44 2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDSO40 2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PQCC44 2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PDSO40
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM(存取时0500ns
|
White Electronic Designs Corporation
|
FMP1617DAX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
FMP1216ACX |
8M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
FAMP0417CAX-W70E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
EM610FV8S |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM610FV8T |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|